Universitat Rovira i Virgili
Campus of International Excellence Southern Catalonia
NEPHOS RESEARCH GROUP

PUBLICATIONS

Publications: Papers in International Journals.

157 publications in international journals until 2019. Sample of the most relevant papers, and publications since 2019:

  1. B. Iñíguez and E. García-Moreno, "A Physically-Based C∞-Continuous Model for Small-Geometry MOSFETs," IEEE Transactions on Electron Devices, vol. 42, no. 2, pp. 283-287, February 1995.
  2. B. Iñíguez, L. F. Ferreira, B. Gentinne and D. Flandre, "A Physically-Based C∞-Continuous Fully-Depleted SOI MOSFET Model for Analog Applications," IEEE Transactions on Electron Devices, vol. 43, no. 4, p.p., 568-575, April 1996
  3. B. Iñíguez and T. A. Fjeldly, "Unified Substrate Current Model for MOSFETs," Solid-State Electronics, vol. 40, no. 1, pp. 87-94, January 1997
  4. M. Jacunski, M. S. Shur , A. A. Owusu, T. Ytterdal, M. Hack, and B. Iñíguez, "A Short - Channel DC SPICE Model for Polysilicon Thin - Film Transistors Including Temperature Effects," IEEE Trans. on Electron Devices, vol. 46, no. 6, pp. 1146-1158, June 1999..
  5. B. Iñiguez, Z. Xu, T. A. Fjeldly and M. S. Shur, "Unified Model for Short-Channel Poly-TFTs," Solid-State Electronics, 43, pp; 1821-1831, October 1999.
  6. B. Iñíguez, B. Gentinne, V. Dessard and D. Flandre, "A Physically-Based C∞-Continuous Model for Accumulation-Mode SOI pMOSFETs," IEEE Transactions on Electron Devices, vol. 46, no. 12, pp. 2295-2303, December 1999.
  7. L. Wang, T. A. Fjeldly, B. Iñíguez, H. C. Slade and M. S. Shur, "Self-Heating and Kink Effects in a-Si:H Thin-Film Transistors," IEEE Trans. On Electron Devices, vol. 47, no. 2, pp. 387-397, February 2000.
  8. B. Iñíguez, J. P. Raskin, L. Demeûs, A. Nève, D. Vanhoenacker, M. Goffioul P. Simon , and D. Flandre, "Deep-Submicron DC to RF SOI MOSFET Macro-Model," IEEE Trans on Electron Devices, vol. 48, no. 9, pp. 1981-1988, September 2001.
  9. V. Dessard, B. Iñíguez, S. Adriaensen and D. Flandre, "SOI n-MOSFET Low-Frequency Noise Measurements and Modeling from Room Temperature up to 250oC, " IEEE Trans on Electron Devices, vol. 49, no. 7, pp. 1289-1295, July 2002.
  10. D. Jiménez, J. J. Sáenz, B. Iñíguez, J. Suñé, L. F. Marsal, and J. Pallarès, "Modeling of nanoscale gate-all-around MOSFETs, " IEEE Electron Device Letters, vol. 25, no. 5, pp. 314-316, May 2004.
  11. D. Jiménez, B. Iñíguez, J. Suñé, L. F. Marsal, J. Pallarès, J. Roig and D. Flores, " Continuous analytic I-V model for surrounding-gate MOSFETs," IEEE Electron Device Letters, vol. 25, no. 8, pp. 571-573, August 2004.
  12. B. Iñiguez, T. A., Fjeldly, A. Lazaro, F. Danneville and M. J. Deen, "Compact-modeling solutions for nanoscale double-gate and gate-all-around MOSFETs," IEEE Trans. on Electron Devices, vol 53, no. 9, pp. 2128-2142 September 2006 (invited paper)
  13. O. Moldovan, B. Iñiguez, D. Jiménez, J. Roig, "Analytical Charge and Capacitance Models of Undoped Cylindrical Surrounding Gate MOSFETs," IEEE Trans. on Electron Devices, vol. 54, no. 1, pp. 162-165, January 2007.
  14. O. Moldovan, D. Jiménez, J. Roig, F. Chávez, and B. Iñiguez, "Explicit and analytical charge and capacitance models for undoped Double-Gate MOSFETs," IEEE Trans. on Electron Devices, vol. 54, no. 7, July 2007.
  15. H. Abd El Hamid, B. Iñiguez, J. Roig, "Two-Dimensional Analytical Model Threshold Voltage and Subthreshold Swing Models of Undoped Double-Gate MOSFETs," IEEE Transaction on Electron Devices, Vol. 52, no. 6, pp. 1402-1408, June 2007
  16. H. Abd El Hamid, B. Iñiguez, J. Roig, "Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate All Around MOSFETs," IEEE Transaction on Electron Devices, Vol. 52, no. 3, pp. 414-422, March 2007
  17. H. Abd El Hamid, J. Roig, V. Kilchytska, D. Flandre,, and B. Iñiguez, "A 3-D Analytical Physically-Based Model for the Subthreshold Swing in Undoped Tri-Gate FinFETs," IEEE Trans. on Electron Devices, vol. 54, no. 9, September 2007.
  18. B. Iñiguez, R. Picos, D. Veksler, A. Koudymov, M. S. Shur, T. Ytterdal, W. Jackson, "Universal compact model for long- and short-channel Thin-Film Transistors," Solid-State Electronics: Special Issue of the International TFT Conference Volume 52, no 3, pp. 400-405, March 2008.
  19. M. Estrada, I. Mejía, A. Cerdeira, J. Pallares, L.F. Marsal and B. Iñiguez, "Mobility model for compact device modeling of OTFTs made with different materials", Solid-State Electronics, Vol. 52, Issue 5, May 2008, Pages 787-794
  20. F. Lime, B.Iñiguez and O. Moldovan, "A quasi two-dimensional compact drain current model for undoped symmetric double gate MOSFETs including short-channel effects," IEEE Trans. on Electron Devices, vol. 55, no. 6, pp. 1441-1448, June 2008
  21. H. Børli, S. Kolberg, T. A. Fjeldly, B. Iñiguez, "Precise Modeling Framework for Short-Channel Double- Gate and Gate-All-Around MOSFETs," IEEE Trans. on Electron Devices, vol. 55, no. 10, pp. 2678-2686, October 2008
  22. B. Nae, A. Lázaro, B. Iñiguez, "High frequency and noise model of gate-all-around metal-oxide-semiconductor field-effect transistors," Journal of Applied Physics, vol.105, no 7, 074505, 2009.
  23. O. Marinov; M.J. Deen; J.A.J. Tejada; B. Iñiguez, "Impact of the fringing capacitance at the back of thin- film transistors," Organic Electronics, Vol. 12, no. 6, pp. 936 -949, June 2010.
  24. J. M. Sallese, N.Chevillon, C. Lallement, B. Iñiguez, "Charge-based modeling of junctionless Double-Gate Field Effect Transistors," IEEE Trans. on Electron Devices, vol. 58, no. 8, pp. 2628-2637, August 2011.
  25. Cheralathan, M.; Iannaccone, G.; Sangiorgi, E.; Iniguez, B., "Analytical drain current model reproducing advanced transport models in nanoscale cylindrical surrounding-gate (SRG) MOSFETs," Journal of Applied Physics, Vol. 110, no. 3, article number 034510, March 2011.
  26. Klimenko, OA.; Knap, W.; Iniguez, B.; Coquillat, D.; Mityagin, YA.; Teppe, F.; Dyakonova, N.; Videlier, H.; But, D.; Lime, F.; Marczewski, J.; Kucharski, K., "Temperature enhancement of terahertz responsivity of plasma field effect transistors," Journal of Applied Physics, vol. 112, no. 1, article number 014506, 2012.
  27. Castro-Carranza, A.; Nolasco, J.C.; Estrada, M.; Gwoziecki,R.; Benwadih, M.; Xu, Y.; Cerdeira, A.; Marsal, L.F.; Ghibaudo,G.; Iñiguez,B.; Pallares, J., "Effect od density of states on mobility in small molecule n-type organic thin film transistors based on a perylene diimide," IEEE Electron Device Letters, Vol. 33, no. 8, pp. 1201-1203, August 2012.
  28. Goyal N.; Iñiguez, B.; Fjeldly, T.A., "Analytical Modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures," Applied Physics Letters, vol. 101, no. 10, pp. 103505-1 -3 (2012)
  29. M. Schwarz, T. Holtij, A. Kloes, B. Iñiguez, "Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model," IEEE Trans. on Electron Devices, vol. 60, no. 2, pp. 880-882, February 2013.
  30. M. Schwarz, T. Holtij, A. Kloes, B. Iñiguez, "Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model," IEEE Trans. on Electron Devices, vol. 60, no. 2, pp. 880-882, February 2013.
  31. M. Schwarz, T. Holtij, A. Kloes, B. Iñiguez, "Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model," IEEE Trans. on Electron Devices, vol. 60, no. 2, pp. 880-882, February 2013.
  32. M. Schwarz, T. Holtij, A. Kloes, B. Iñiguez, "Performance Study of a Schottky Barrier .Double-Gate MOSFET Using a Two-Dimensional Analytical Model," IEEE Trans. on Electron Devices, vol. 60, no. 2, pp. 880-882, February 2013.
  33. F. M. Yigletu, S. Khandelwal, T. A. Fjeldly and B. Iñiguez, " Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs," IEEE Trans. on Electron Devices, vol. 60, no. 11, pp. 3746-3752, November 2013.
  34. T. Holtij, M. Graef, F. Hain, A. Kloes, B. Iñiguez, "Compact model for short-channel junctionless accumulation-mode Double-Gate MOSFETs," IEEE Trans. on Electron Devices, vol. 61, no. 2, pp. 288-299, February 2014.
  35. Moldovan, O.; Lime, F.; Iñiguez, B., A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part II: Total Charges and Intrinsic Capacitance Characteristics, IEEE Trans. on Electron Devices, vol.61, no.9, pp. 3042-46, Sept. 2014
  36. F.Lime, O. Moldovan, B. Iñiguez, A Compact Explicit Model for Long-Channel Gate-All-Around JunctionlessMOSFETs. Part I; DC Characteristics, IEEE Trans. on Electron Devices, vol.61, no.9, pp. 3036-41, Sept. 2014
  37. Castro-Carranza, A., Estrada, M. ; Cerdeira, A. ; Nolasco, J.C. ; Sanchez, J. ; Marsal, L.F. ; Iñiguez, B. ; Pallares, J., "Compact capacitance model for OTFTs at low and medium frequencies," IEEE Transactions on Electron Devices, vol. 61, no. 2, pp. 638-642, Feb 2014
  38. O. Moldovan, A. Castro-Carranza, A. Cerdeira, M. Estrada, P. Barquinha, R. Martins, E. Fortunato, S. Miljakovic, B. Iñiguez, "A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors," Solid-State Electronics, vol. 126, pp. 81-86, December 2016.
  39. Graef, M; Hosenfeld, F; Horst, F; Farokhnejad, A; Hain, F; Iñiguez, B.; Kloes, A ; "Advanced analytical modeling of double-gate Tunnel-FETs - A performance evaluation," Solid-State Electronics, vol. 141, pp. 31-39, March 2018, DOI: 10.1016/j.sse.2017.11.009.
  40. F. Lime, F. Avila-Herrera, A. Cerdeira, B. Iñiguez, "A compact explicit DC model for short-channel Gate-All-Around junctionless MOSFETs," Solid-State Electronics, vol. 131, pp. 24-29, May 2017.
  41. Muhea, WE; Yigletu, FM; Lázaro, A.; Iñiguez, B.; "Analytical GaN HEMT model for noise simulations," Semiconductor Science & Technology, Vol. 32, No. 12, pp. 12502, December 2017
  42. Muhea, WE; Yigletu, FM; Cabré-Rodon, R; Iñiguez, B; "Analytical Model for Schottky Barrier Height and Threshold Voltage of AlGaN/GaN HEMTs With Piezoelectric Effect," IEEE Transactions on Electron Devices, vol. 65, issue 3, pp. 901-907, March 2018. DOI: 10.1109/TED.2018.2789822

Publications in journals since 2019

  1. Horst, F; Farokhnejad, A; Zhao, Q.-T.; Iñiguez, B.; Kloes, A; "2D Physics Based Compact DC Modeling of DG Tunnel FETs," IEEE Transactions on Electron Devices, Special Issue on "Compact modelling for cirduit design," 66(1), pp. 132 - 138, January 2019.
  2. H. Cortés-Ordóñez et al., S. Jacob, F. Mohamed, G. Ghibaudo, B. Iñiguez, "Analysis and compact modeling of gate capacitance in organic thin-film transistors", IEEE Transactions on Electron Devices, 65(5), pp. 2370-2374, 2019.
  3. H. Cortés-Ordóñez, C. Haddad, X. Mescot, K, Romanjek, G. Ghibaudo, M. Estrada, A. Cerdeira, and B. Iñiguez, "Parameter extraction and compact modeling of OTFT from 150 to 350K,", Trans. on Electron Devices, vol. 67, no. 12, pp.5695-5692, Dec 2020.
  4. O. Moldovan O, A. Castro-Carranza, M. Estrada, A. Cerdeira, F. Lime, and B. Iñiguez, "A complete charge based capacitance model for IGZO TFTs," IEEE Electron Device Letters, vol. 40, no. 5, pp. 730- 733, May 2019.
  5. A. Cerdeira, M. Estrada, Y. Hernández-Barrios, I. Hernández, and B. Iñiguez, "Full capacitance model, considering the specifics of amorphous oxide semiconductor thin film transistor structure,"Solid-State Electronics. 156, pp. 16 - 22 (2019).
  6. W. E. Muhea, T. Gneiting, and B. Iñiguez, "Current-voltage and flicker noise analysis and unified modeling for amorphous indium-gallium zinc-oxide thin film transistors with etch stop layer from 298 to 333 K," J. Appl. Phys., vol. 125, no. 14, Apr. 2019, Art. no. 144502
  7. W. E. Muhea, G. U. Castillo, H. C. Ordóñez, T. Gneiting, G. Ghibaudo and B. Iñiguez, "Parameter Extraction and Compact modeling of 1/f noise for amorphous ESL IGZO TFTs," IEEE Journal of the Electron Devices Society, DOI: 10.1109/JEDS.2020.2970177, Jan. 2020.
  8. W. E. Muhea, K. Romanjek,, X. Mescot, C. G. Theodorou, M. Charbonneau, F. Mohamed, G. Ghibaudo, and B. Iñiguez. "1/f noise analysis in high mobility polymer-based OTFTs with dielectric," Appl. Phys. Lett. 114, 243301 (2019).
  9. S. Jung, Y. Bonnassieux, G. Horowitz, S. Jung, B. Iñiguez, C. H. Kim, "Advances in compact modeling of organic Field-Effect Transistors," Journal of the Electron Devices Society, vol. 8, December 2020, DOI 10.1109/JEDS.2020.3020312.
  10. A. Nikolaou, G. Darbandy, J. Leise, J. Pruefer, J. W. Borchert, M. Geiger, H. Klauk, B. Iniguez, A. Kloes: Charge-Based Model for the Drain-Current Variability in Organic Thin-Film Transistors due to Carrier-Number and Correlated-Mobility Fluctuation, IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 4667-4671, September 2020.
  11. Y. Hernández-Barrios, A. Cerdeira, M. Estrada, B. Iñiguez, "Analytical current-voltage model for Double-Gate a-IGZO TFTs with symmetric structure for above threshold," IEEE Trans. On Electron Devices, vol. 67, no. 6, pp. 1980-1986, May 2020.
  12. Y. Hernández-Barrios, J. N. Gaspar-Angeles, M. Estrada, B. Iñiguez, A. Cerdeira, "Dynamic simulation of a-IGZO TFT circuits using the Analytical Full Capacitance Model (AFCM)" , IEEE Journal of the Electron Devices, Society, vol. 9, pp. 464-468, December 2020.
  13. J. Prüfer, J. Leise, G. Darbandy, A. Nikolaou, H. Klauk, J. W. Borchert, B. Iniguez, T. Gneiting, and A. Kloes: Compact Modeling of Short-Channel Effects in Staggered Organic Thin-Film Transistors, IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 5082-5090, September 2020.
  14. J. Leise, J. Pruefer, G. Darbandy, M. Seifaei, Y. Manoli, H. Klauk, U. Zschieschang, B. Iniguez, and A. Kloes: Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs, IEEE Journal of the Electron Devices Society, vol. 8, pp. 396-406, March 2020.
  15. J. Leise, J. Prüfer, A. Nikolaou, G. Darbandy, H. Klauk, B. Iniguez, and A. Kloes: Macro model for AC and Transient Simulations of Organic Thin-Film Transistor Circuits Including Nonquasistatic Effects, IEEE Trans. Electron Devices, vol. 67, no. 11, pp. 4672-4676, Sept 2020.
  16. Li G; Fan Z; Andre N; Xu Y; Xia Y; Iniguez B; Liao L; Flandre D. Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors. IEEE Electron Device Letters. 42(1), pp. 94 - 97, January 2021.
  17. Yilmaz, Kerim; Darbandy, Ghader; Reimbold, Gilles; Iniguez, Benjamin; Lime, Francois; Kloes, Alexander;. Equivalent DG Dimensions Concept for Compact Modeling of Short-Channel and Thin Body GAA MOSFETs Including Quantum Confinement. IEEE Transactions On Electron Devices. 67(12), pp. 5381 - 5387, December 2020.
  18. Farokhnejad A, Schwarz M, Horst F, Iñíguez B, Lime F, Kloes A. Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts. Solid-State Electronics. 159, pp. 191 - 196, 2019.
  19. Hernández-Barrios, Y; Estrada, M; Pashkovich, A; Muhea, WE; Iñiguez, B; Cerdeira, A; "Analytical I-V and C-V models for symmetric double-gate AOSTFTs," Semiconductor Science & Technology, vol. 36, no. 7, 075024, July 2021.
  20. Lime, F; Cerdeira, A; Estrada, M; Pashkovich, A; Iñiguez, B; "Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances," IEEE Trans. on Electron Devices, vol.68, no. 7, pp. 3384-3389, July 2021.
  21. J. Pruefer, J. Leise, A. Nikolaou, JW Borchert, G. Darbandy, H. Klauk, B. Iñiguez, T. Gneiting, A. Kloes, "Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors," IEEE Trans. on Electron Devices, vol. 68, no. 8, pp. 3843-3850, August 2021.
  22. B. Iñiguez A. Nathan, A. Kloes, Y. Bonnassieux, K. Romanjek, M. Charbonneau, J, L. van der Steen, G. Gelinck, T. Gneiting, F. Mohamed, G. Ghibaudo, A. Cerdeira, M. Estrada, S. Mijalkovic, A. Nejim, "New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs," IEEE Journal of the Electron Devices Society, vol. 9, pp. 911-932, September 2021
  23. Yvan Bonnassieux, Christoph J. Brabec, Yong Cao, Tricia Breen Carmichael, Michael L. Chabinyc, Kwang Ting Cheng, Gyoujin Cho, Anjung Chung, Corie L. Cobb, Andreas Distler, Hans Joachim Egelhaaf, Gerd Grau, Xiaojun Guo, Ghazaleh Haghiashtiani, Tsung Ching Huang, Muhammad M. Hussain, Benjamin Iniguez, Taik Min Lee, Ling Li, Yuguang Ma, Dongge Ma, Michael C. McAlpine, Tse Nga Ng, Ronald Österbacka*, Shrayesh N. Patel, Junbiao Peng, Huisheng Peng, Jonathan Rivnay, Leilai Shao, Daniel Steingart, Robert A. Street, Vivek Subramanian, Luisa Torsi, Yunyun Wu, "The flexible and printed electronics roadmap," Flexible and Printed Electronics, vol. 6, issue 2, 023001, June 2021 (invited).
  24. Pruefer, J., Leise, J., Klauk, H., Darbandy, G.; Nikolaou, A., Iñiguez, B., Gneiting, T., Kloes, A., "Modeling the Short-Channel Effects in Coplanar Organic Thin-Film Transistors," IEEE Trans. on Electron Devices, vol. 69, no. 3, pp. 1099-1106, March 2022.
  25. Yilmaz, K., Iñiguez, B. Lime, F., Kloes, A., "Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs," IEEE Trans. on Electron Devices, vol. 69, no. 3, pp. 1588-1595, March 2022.
  26. Roemer, C., Darbandy, G., Schwarz, M., Trommer, J., Heinzig, A., Mikolajick, T., Weber, W. M., Iñiguez, B., Kloes, A., "Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors," IEEE Journal of the Electron Devices Society, vol. 10, pp. 416-423,2022
  27. Yilmaz, K., Iñiguez, B. Lime, F., Kloes, A., "Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform," IEEE Trans. on Electron Devices, vol. 69, no. 1, pp. 17-24, January 2022.
  28. Leise, J., Pruefer, J., Darbandy, G., Nikolaou, A., Giorgio, M., Caironi, M., Zschieschang, U., Klauk, H., Kloes, A., Iñiguez, B., Borchert, J. W., "Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance," Journal of Applied Physics, vol. 130, issue 12, article no. 125501.
  29. He, PH; Ding, CC; Zou, XM, Li, GL; Hu, W; Ma, C;Flandre, D;Iñiguez, B; Liao, L; Lan, LF; Liu, XQ; "Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel," Applied Physics Letters, vol. 121, issue 19, Article no. 193391, Nov. 7 2022.
  30. He, PH; Hong, RH; Li, GL; Zou, XM; Hu, W; Lan, LF; Iniguez, B; Liao, L;Liu, XQ; "Effect of Humidity on Properties of Aqueous-Processed Tb-Doped Indium Oxide Thin-Film Transistors," IEEE Electron Device Letters, vol. 43, no. 11, pp. 1894-97, Nov. 2022.
  31. Y. Zhou, Y. Song, R. Hong, X. Liu, X. Zou, B. Iñiguez, D. Flandre, G. Li, L. Liao, "Electrical evolution of p-type SnOx film and transistor deposited by RF magnetron sputtering," IEEE Trans. on Electron Devices, vol. 70, no. 6, pp. 310-315, June 2023.
  32. M. Schwarz, T. D, Vethaakm V. Derycke, A. Francheteau, B. Iñiguez, S. Kataria, A. Kloes, F. Lefloch, M. C. Lemme, J. P. Snyder, W. M. Weberm and L. Calvet, "The Schottky Barrier transistor in emerging electronic devices, Nanotechnology, vol. 34m no. 35, June 15 2023.
  33. A. Nikolaou, J. Leise, U. Zschieschang, H. Klauk, T. Gneiting, G. Darbandy, B. Iñiguez and A. Kloes, "Compact model for the bias-depended low frequency noise in organic thin film transistors due to carrier number and mobility fluctuations," Organic Electronics, vol. 120, 106846, September 2023.
  34. M. Koch, H. Tseng, A. Weissbach, B. Iñiguez, K. Leo, A. Kloes, H. Kleemann and G. Darbandy, "Device physics, modeling and simulation of organic electrochemical transistors, ", IEEE Journal of the Electron Devices Society, doi: 10.1109/JEDS-2023.3263278.
  35. C. Roemer, N. Dersch, G. Darbandy, M. Schwarz, Y. HanQ. -T. Zhao, B. Iñiguez, A, Kloes, "Compact modeling of Schottky Barrier transistors at deep cryogenic temperatures," Solid-State Electronics, vol. 207, 108686, September 2023.
  36. A. Kloes, J. Leise, J. Pruefer, A. Nikolaou, B. Iñiguez, T. Gneiting, H. Klauk, G. Darbandy, "THM-OTFT: A complete physics-based Verilog-A compact model for short-channel organic Thin Film Transistors," IEEE Journal of the Electron Devices Society, doi: 10.1109/JEDS-2023.3294598.

Books and Book Chapters

  1. B. Iñíguez, T. Fjeldly and M. S. Shur, "Thin Film Transistor Modeling", in Silicon and Beyond: Advanced Circuit Simulators and Device Models, M.S. Shur and T.A. Fjeldly, editors, World Scientific Publishers, Singapore, 2000, 703-723.
  2. B. Iñíguez, T. Fjeldly and M. S. Shur, "SPICE Models for Novel Semiconductor Devices", in Silicon and Beyond: Advanced Circuit Simulators and Device Models, M.S. Shur and T.A. Fjeldly, editors, World Scientific Publishers, Singapore, 2000, pp. 725-781.
  3. B. Iñíguez, T. Ytterdal, T. A. Fjeldly and M. S. Shur, "Physics, Modeling and Simulation of Poly, Micro- and Nano-Crystalline Thin-Film Transistors", in Thin Film Transistors. Materials and Processes. Volume 2: Polycrystalline Thin-Film Transistors, Kluwer Academic Publishers, 101 Philip Drive, Assinippi Park, Norwell, MA 02061, pp. 95-141, 2004.
  4. O. Moldovan and B. Iñiguez, Compact modeling of MOSFET devices, VDM Verlag, ISBN-10: 9783639148824, 2009.
  5. B. Iñiguez, F. Lime, A. Lázaro and T. A. Fjeldly, "Compact Models for Advanced CMOS Devices," in Nanoscale CMOS: Innovative Materials, Modeling and Simulation, Wiley-ISTE, pp. 381-442, 2010.
  6. O. Moldovan, A. Lázaro, F. Danneville, R. Picos, B. Nae, B. Iñiguez, M. J. Deen, "Nanoscale FETs," pp. 261-347 , in , Silicon-Based Millimeter-wave TechnologyMeasurement, Modeling and Applications, Advanced in Imaging and Electron Physics,.vol. 174, pp. 1-483 (2012).
  7. B. Iñiguez, R. Ritzenthaler and F. Lime, "Compact Modelling of Double and Tri-Gate MOSFETs," 135004 , Special Issue on Advanced Modeling of Nanoscale Devices, International Journal of High Speed Systems and Systems, edited by B. Iñiguez and T. A. Fjeldly, World Scientific Publishers, vol. 22, no. 1, November 2013.
  8. Frontiers in Electronics. Advanced Modeling of Nanoscale Electron Devices. Editors: B. Iñiguez and T. A. Fjeldly. World Scientific Publ. ISBN:978-981-4583-19-0; 978-981-4583-18-3. ISSN: 1793-1274. 2014.
  9. R. Ritzenthaler, F. Lime and B. Iñiguez, "Compact modeling of Double- and Tri-Gate MOSFETs, " in Frontiers in Electronics. Advanced Modeling of Nanoscale Electron Devices. World Scientific Publ, pp. 152- 194 (2014).
  10. B. Iñiguez, Roadmap of Flexible Electronics: Challenges and Possible Solutions, IRDS White Paper, 2021.
  11. B. Iñiguez, "Flexible Electronics," in "More than Moore Devices and Integration in Semiconductors," edited by F. Balestra and F. Iacopi, SpringerNature, Switzerland, 2023.

Invited talks in internacional conferences.

Since 2017:

[1] B. Iñiguez, "Physically-based compact modeling of GaN HEMTs," Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Las Palmas (Spain), May 2017.

[2] B. Iñiguez, "Modeling and modeling and parameter extraction for Organic and Amorphous Oxide TFTs," IEEE EDS Mexico Technical Meeting, Querétaro (Mexico), October 10 2018.

[3] B. Iñiguez, "Design Oriented Modeling of TFTs for Flexible Electronics," 9th International Conference on CAD for TFT transistors (CAD-TFT)," Shenzen (China), November 2018.

[4] B. Iñiguez, H. Cortes-Ordonez, A. Cerdeira, M. Estrada, S. Jacob, C. Haddad, G. Ghibaudo, and F. Mohamed, "Compact Modeling of I-V and C-V Characteristics in OTFTs from 125K to 350K," 7th Symposium on Organic Semiconductor Materials, Devices and Processing of the 235th Electrochemical Society Meeting, Dallas (TX, USA), June 2019.

[5] B. Iñiguez, "Schottky Barrier Devices," 3rd Symposium on Schottky barrier MOS devices, Paris (France), October 4 2019.

[6] B. Iñiguez, "Modeling of low frequency noise in Organic and Oxide TFTs," 11th International Conference on CAD for TFT transistors (CAD-TFT)," virtual event , November 2020.

[7] B. Iñiguez, "China-Europe Dialogue on TFT Compact Modeling," 11th International Conference on CAD for TFT transistors (CAD-TFT)," virtual event , November 2020.

[8] B. Iñiguez, "Analysis and modeling of OTFTs and IGZO TFTs from 150 to 350K," Virtual MOS-AK Workshop, September 202," 7th Symposium on Organic Semiconductor Materials, Devices and Processing of the 239th Electrochemical Society Meeting, June 2021

[10] B. Iñiguez, "Compact modeling of Organic and Amorphous Oxide Thin Film Transistors (TFTs) from 150 to 350K," IEEE ED Spain Chapter Virtual Mini-Colloquium," June 8 2021.

[11] Benjamin Iñiguez, Harold Cortés-Ordóñez , Gérard Ghibaudo , Antonio Cerdeira , Magali Estrada, "Compact Modeling of Organic and IGZO TFTs from 150K to 350K," 5th IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Chengdu(China)/virtual, April 2021.

[12] B. Iñiguez, "Roadmap of Flexible Electronics: Challenges and Solutions," Workshop on The Future of Nanoelectronic Devices and Systems Beyond Moore, Satellite Event of the EUROSOI-ULIS Conference, August 31 2021.

[13] B. Iñiguez, "Compact Modeling Approaches for Organic and Amorphous Oxide Semiconductor TFTs," 12th International Conference on Computer-Aided Design for thin Film Transistor Technologies (CAD-TFT 2021), September 2021.

[14] B. Iñiguez, "Compact modeling of TMD FETs," 4th Latin America MOS-AK Workshop, Puebla (Mexico), July 3 2022.

[15] B. Iñiguez, H. Cortés-Ordóñez,, K. Romanjek, M. Charbonneau, G. Ghibaudo, A. Cerdeira, M. Estrada, "Modeling of Organic and IGZO TFTs from 150 to 370K," 2022 International TFT Conference (ITC 2022), Guildford (UK), September 2022.

[16] B. Iñiguez, "Compact TFT modeling solutions for 2D semiconductor FETs," CAD-TFT Workshop, 5th IEEE International Flexible Electronics Technology, San Jose CA (USA), Auguet 2023.

[17] B. Iñiguez, "Compact modelling of thin-film transistors with non-negligible contact effects," Workshop W6 "Source-gated transistors," ESSDERC 2023, Lisbon (Portugal), September 2023.

Participation in funded projects by the European Commission

Project title: BAYFLEX (Bayesian Inference with Flexible electronics for biomedical Applications), Horizon-EIC-2022-PathfinderOpen, Grant Agreement no. 101099555.

Funding agency: Horizon 2020 Programme. Pathfinder Open Subprogramme, European Commission.

Participating organizations: Université Paris Saclay (France), TU-Dresden (Germany), URV (Spain), CEA-Liten (/France), Bit Brain Technologies (Spain), Institut Mines-Telecom (France).

Duration: from April 1 2023 to October 31 2026

Coordinator: Laurie Calvet (Ecole Polytechnique). Coordinator of the URV group: Benjami Iñiguez (URV). Funding received by the URV group: 348895 Euro

Project title: Design-Oriented modelINg of flexIble electrOnics (DOMINO , Grant Agreement no. 645760.

Funding agency: European Commission, Horizon 2020 Programme, Marie Skłodowska-Curie Research and Innovation Staff Exchange (RISE).

Participating organizations: URV, Ecole Polytechnique (France), University of Cambridge (UK), THM (Germany), CEA-LITEN (France), TNO (The Netherlands), Silvaco Ltd. (UK), Infiniscale (Freance), AdMOS (Germany)

Coordinator: Benjamí Iñiguez (URV). Principal Investigator of the URV team: Benjamin Iñiguez (URV)

Duration: from Dec 1 2014 to Nov 30 2018, funding used until July 31 2019. . Total project grant amount: 743500 Euro. URV grant amount: 189500

Project title: "SQWIRE" ("Silicon Quantum WIREs), STREP, (Contract no 257111)

Funding Agency: European Commission, 7th Framework Programme, Cooperation Subprogramme

Participating Entities: URV, Tyndall (Ireland), Intel (Ireland), Magwel (Belgium), LETI (France), SOITEC (France), INPG (France) Duration, from: 01/09/2010 to: 31/08/2013

General Coordinator: Jean-Pierre Colinge (Tyndall Institute). Coordinator of the URV group: Benjamí Iñiguez. Funding received by the URV group: 252000 Euro.

Project title: "COMON: Compact Modelling Network", Industry-Academia Partnership and Pathways, (Contract no 218255).

Funding Entity: European Commission. Industry Academia Partnership and Pathway (IAPP), 7th Framework Programme (FP7) (FP7-PEOPLE-2007-3-1-IAPP).

Participating Entities: URV, UCL (Belgium), TUC (Greece), EPFL (Switzerland), ULP (France), UniK (Norway), TU-Ilmenau (Germany), ITE (Polamd), Infineon Technologies GmbH (Germany), AMS GmbH (Austria), RFMD Ltd (UK), AdMOS GmbH (Germany), DOLPHIN Integration SA (France), Melexis Inc (Ukraine), AIM-Software Inc (Norway).

Duration, from: 01/12/2008 to: 30/11/2012. . General Coordinator: Benjamí Iñiguez (URV)

Total funding: 1921436 Euro. Funding received by the URV group: 223809 Euro.

Project title: "NANOSIL", Network of Excellence, (Contract no 216171). Funding Entity: European Commission, Network of Excellence, 7th Framework Programme (FP7) Participating Entities: URV, INPG (France), and 24 more European institutions, including 6 companies). Duration, from: 01/01/2008 to:31/12/2010 General Coordinator: Francis Balestra (INPG). Coordinator of the URV group: Benjamin Iñíguez Funding received by the URV group: 120330 Euro.

Transfer of knowledge to companies

[1]Implementation of Dr. Iñiguez' compact model of Fully-Depleted SOI MOSFETs in the IsSPICE circuit simulator (model incorporated into the commercial version of ICAP/4 8.0), tool developed by Intusoft. Inc. P. O. Box 710, San Pedro, CA, (USA).
  1. Implementation of Dr. Iñiguez' models of charge and substrate current of MOS transistors, and of my model of short-channel poly-Si TFT in the commercial version of the AIM-Spice simulator (tool developed by AIM-Software Inc).
[3]Implementation of "RPI" compact TFT models, co-developed by Dr. Iñiguez, in the commercial version of the SmartSpice circuit s imulator (tool developed by Silvaco International).
  1. Implementation of "RPI" compact TFT models, co-developed by Dr. Iñiguez, in the commercial version of the HSPICE circuit simulator (Cadence, Synopsis).
  2. Implementation of "RPI" compact TFT models, co-developed by Dr. Iñiguez, in the commercial version of the ELDO circuit simulator (Mentor).
[6]Compact model for Amorphous Oxide TFT, developed by Prof. Iñiguez' team and incorporated to t he commercial version of SmartSpice (Silvaco Inc.), as MOTFT
  1. Compact model for a-Si:H TFT, developed by Prof. Iñiguez' team and incorporated to SmartSpice (Silvaco Inc.).
[8]Compact model for Organic TFT developed by Prof. Iñiguez' team and implemented in the internal version of SMASH (simulator developed by Dolphin).
  1. Compact model for Organic TFT developed by Prof. Iñiguez' team, implemented in Verilog-A. The code was sent to all partners of the FlexNet FP7 Network of Excellence for their eventual parameter extractions and circuit design work.
[10]Compact model for nanoscale Double-Gate MOSFETs, developed by Prof. Iñiguez' team and implemented in the internal version of SMASH (simulator developed by Dolphin).
  1. Compact model for nanoscale Double-Gate MOSFETs and FinFETs developed by Prof. Iñiguez' team, implemented in Verilog-A. The code was sent to partners of the FP7 COMON project for their eventual parameter extractions and circuit design work.
  2. Compact model for GaN HEMTs, co-developed by Prof. Iñiguez' team, implemented in Verilog- A The code was submitted to the Compact Modeling Council Call for a Standard GaN HEMT model and in 2018 it was finally selected as a Standard model (called ASM) by CMC and recommended to the industry.
  3. Compact model for Double-Gate Amorphous Oxide TFT, developed by Prof. Iñiguez' team and incorporated to SmartSpice (Silvaco Inc.).

Member of the Advisory Board of funded projects by the European Commission

Project title: ASCENT. Access to European Nanoelectronics Network , Grant Agreement no. 654384.

Funding agency: Horizon 2020 Programme. INFRAIA Subprogramme, European Commission.

Participating organizations: Tyndall Institute-University College Cork (Ireland, Coordinator), IMEC (Belgium), CEA-LETI (France).Type of participation: Benjamin Iñiguez (URV) was one of the members of the ASCENT International Advisory Board. Duration: from May 1 2015 to April 30 2019. Total project grant amount: 4698623 Euro
Project title: ASCENT+. European Nanoelectronics Network , Grant Agreement no. 654384.

Funding agency: Horizon 2020 Programme. INFRAIA Subprogramme, European Commission.

Participating organizations: Tyndall Institute-University College Cork (Ireland, Coordinator), IMEC (Belgium), CEA-LETI (France), Fraunhofer Institute (Germany), LIN (Portugal), SINANO Institute (France), MIDAS Ltd. (Ireland), DSP Valley VZW (Belgium), Minalogic (France), Silicon Saxony EV (Germany), University of Padua (Italy), University of Gant (Belgium), CNRS (France), TU-Freiberg (Germany). Type of participation: Benjamin Iñiguez (URV) is one of the members of the ASCENT+ International Advisory Board. Duration: from September 1 2020 to August 31 2024. Total project grant amount: 9853821 Euro

Projects funded by private companies

Project title: "Modeling of Amorphous Oxide Semiconductor TFTs", T12129S. Funding Company: Silvaco Co. (Santa Clara CA, USA)

Participating Entities: URV, Silvaco Duration, from: 01/06/2012 to 31/12/2013 Project Leader: Benjamí Iñíguez (URV) Funding received : 22000 Euro

Title of the project: "TFT SPICE model". T15130S Funding Company: Silvaco Inc. (USA).

Participating Entities: URV, Silvaco Duration: 19/02/2016-18/08/2017.

Project leader: Benjamí Iñiguez (URV). Participants: URV, Silvaco Inc.

Funding granted: 22000 Euro.

Title of the project: "Double Gate TFT SPICE model". Funding Company: Silvaco Inc. (USA).

Participating Entities: URV, Silvaco Duration: 01/07/2018-30/06/2019.

Project leader: Benjamin Iñiguez (URV). Participants: URV, Silvaco Inc.

Funding granted: 18000 Euro.

Supervised Doctoral Thesis

1)Hamdy M. Abd-El-Hamid, "Compact Modeling of Multiple-Gate MOSFETs," May 2007
  1. Oana Moldovan, " Compact Models of the Small-Signal Equivalent Circuits of MG MOSFETs," May 2008.
3)Michaela Weidemann, "2-D and 3-D Predictive Models of Multiple-Gate MOSFET." February 2010. Supervisor: Benjamin Iñiguez (URV). Co-supervisor: Alexander Kloes (Fh. Giessen, Germany).
  1. Mike Schwarz, "Two-dimensional analytical predictive modeling of Schottky Barrier SOI and Multi-Gate MOSFETs" October 2012. Supervisor: Benjamin Iñiguez (URV). Co- supervisor: Alexander Kloes (Fh. Giessen, Germany).
5)Ghader Darbandy, "Compact modeling of gate tunneling leakage current in advanced nanoscale SOI MOSFETs," November 2012. Supervisor: Benjamin Iñiguez.
  1. Alejandra Castro-Carranza. "UMEM-based capacitance model for organic field effect transistors: development and implementation," February 2013. Supervisor: Josep Pallarès (URV). Co-supèrvisor: Benjamin Iñiguez (URV)
7)Muthupandian Cheralathan, "Compact modeling for Multi-Gate MOSFETs using advanced transport models," February 2013. Supervisor: Benjamin Iñiguez.
  1. Thomas Holtij, "2D Analytical Modeling of Nanoscale Junctionless and Junction-Based Multi-Gate MOSFETs." Defence: September 2014, Supervisor: Benjamin Iñiguez (URV). Co-supervisor:Alexander Kloes (Fh. Giessen, Germany).
9)Fetene M. Yigletu, "Physics-Based Compact Modeling of HEMT for circuit simulation." Defence: September 2014, Supervisor: Benjamin Iñiguez (URV).
  1. Michael Gräf, "Two-Dimensional Analytical Modeling of Tunnel FETs." Supervisors: Benjamin Iñiguez and Alexander Kloes (THM, Germany). Date of defence: July 5 2017.
  2. Fabian Hosenfeld, "NEGF Based Analytical Modeling of Advanced MOSFETs." Supervisors: Benjamin Iñiguez, François Lime and Alexander Kloes (THM, Germany). Date of defence: December 12 2017.

Since 2019:

  1. Wondwosen E. Muhea, "Characterization and Compact Modeling of Flicker Noise and Piezoelectric Effect in Advanced Field Effect Transistors". Defence: July 8 2019.
  2. Fabian Horst, "Compact DC Modeling of Tunnel FETs." Defence: November 29 2019. Supervisors: Benjamin Iñiguez (URV), Alexander Kloes (THM, Germany).
  3. Atieh Farokhneyad, "Analytical AC Modeling of the Intrinsic Channel in Tunnel-FETs," Defence: July 16 2020. Supervisors: François Lime (URV), Benjamin Iñiguez (URV), Alehander Kloe (THM, Germany).
  4. Harold Cortés-Ordóñez, "Physical Behaviour Analysis and Compact Temperature-Dependent Modeling in Organic and IGZO TFTs,". Defence: July 31 2020. Supervisor: Benjamin Iñiguez (URV)
  5. Jakob Prüfer, " Compact DC Modelling of Short-Channel Effects in Organic Thin-Film Transistors,"Defence: February 28 2022. Supervisors: Benjamin Iñiguez (URV), Alexander Kloes (THM, Germany).
  6. Jakob Leise, "Charge-Based Compact Modeling of Capacitances and Low-Frequency Noise in OTFTs,"Defence: April 26 2022. Supervisors: Benjamin Iñiguez (URV), Alexander Kloes (THM, Germany).
  7. Aristeidis Nikolaou, "Compact Modeling of Variability in Organic Thin-Film Transistor. " Defence: October 10 2023. Supervisors: Benjamin Iñiguez (URV), Alexander Kloes (THM, Germany).

Organizing activities in conferences and training events

Since 2018

  1. General Chair of ESSRC 2026 (formerly ESSDERC-ESSCIRC), Palma (Spain), September 2026 (approved)
  2. General Chair of the EUROSOI-ULIS Conference, Tarragona (Spain), May 2023.
  3. General Chair of thel 10th CAD-TFT Conference, Tarragona, July 9-10 2019.
  4. General Chair of the SINANO Modeling Summer School, Tarragona, September 25-28 2018
  5. Chair of the IEEE EDS Spain Mini-Colloquium, Tarragona (Spain) May 24,2019
  6. Chair of the EDS Mini-Colloquium on TFTs and Flexible Electronics, Tarragona, 11/07/2019.
  7. Chair of the IEEE EDS Virtual Mini-Colloquium on Photonics and Photovoltaics, July 31, 2020.
  8. Chair of the IEEE EDS Virtual Mini-Colloquium on Compact Modeling, December 17, 2020.
  9. Chair of the IEEE ED Spain Chapter Virtual Mini-Colloquium, June 8 2021
  10. Chair of the IEEE EDS Mini-Colloquium on TFTs for Emerging Technologie, Sept 2 2021.
  11. Chair of the IEEE EDS Mini-Colloquium on CAD/EDA Modeling, Tarragona, June 28-29 2022.
  12. Chair of the IEEE EDS Upskilling Course on Flexible and Organic Electronics," Tarragona, November, 24-25 2022.
  13. Chair of the IEEE EDS Mini-Colloquium "75th Anniversary of the Transistor", Tarragona, January 26 2023.
  14. Co-Chair of the 5th (Virtual) Symposium on Schottky Barrier MOS devices, June 30 2021.
  15. Co-Chair of the annual Latin America MOS-AK Workshop, Armenia (Colombia), (2019-22).
  16. Co-Chair of the 7th G03 Symposium (Organic materials, devices and processing) of the 235th Electrochemical Society Meeting, Dallas (TX, USA), May 2019
  17. Chair of the 8th G03 Symposium (Organic materials, devices and processing) of the 239th Electrochemical Society Meeting, June 2-3 2021.
  18. Chair of the 9th G03 Symposium (Organic materials, devices and processing) of the 239th Electrochemical Society Meeting, May 26-30 2024.

Previous activities.

  1. General Chair of the Workshop of Flexible Electronics (WFE), Tarragona (Spain), June 29 2016
  2. General Chair of the EUROSOI Workshop, Tarragona (Spain), January 27-29 2014
  3. General Chair of the 8th International Conference on Organic Electronics (ICOE), Tarragona, 25-27/06/2012.
  4. General Chair of the 4th Training Course on Compact Modeling, June 27-28 2016, 2nd Training Course on Compact Modeling, 28- 29/06/2012, 1st Training Course on Compact Modeling, 30/06/2010-01/07/2010., Tarragona

Awards and Honors

1)ICREA Academia Prize from ICREA (Catalan Institute for Advanced Research, Generalitat de Catalunya), January 2009

  1. Awarded with the Distinction from the Generalitat de Catalunya in order to Promote the University Research, in the category of junior researchers, July 2004.
3)Two Premium Awards from the Institution of Engineering and Technology (IET) for research papers, published in IEE Proceedings: Circuits, Devices and Systems:
4)Awarded with one Grant for the Intensification of Research Activities from URV (funded by URV, Spanish Ministry of Science and Generalitat de Catalunya), in 2008
5)Obtained the IEEE Senior Member Degree (Member no. 40189017), in 2003.
  1. IEEE Electron Device Society Distinguished Lecturer, since 2004
  2. ICREA Academia 2013 Award. Obtained in January 2014 for a period of 5 years, with an amount of 100000 Euro for research.
  3. Recognition for Research Excellence for the period 2005-2016 by the Spanish Ministry of Science and Innovation (MICINN), and by the Generalitat de Catalunya (4 positive evaluations)

.

Awards and honors since 2019:

  1. Fellow of IEEE, "for contributions to physics-based compact models of semiconductor of semiconductor devices", 2019.  
  2. Elected BoG Member al Large of IEEE EDS in December 2017 and December 2020.
  3. Recognition for Research Excellence for the period 2016-2022 by the Spanish Ministry of Science and Innovation (MICINN) and by the Generalitat de Catalunya.
  4. Recognition for Excellence in Knowledge Transfer for the period 2013-2018, by the Spanish Ministry of Science.
  5. As Chair of the IEEE EDS,Spain Chapter, "EDS Chapter of the Year" Award from the EDS in 2021, and IEEE R8 Chapter of the Year 2023, category Medium Chapters.
  6. Grant from IEEE EDS for a collaboration project with Addis Ababa Institute of Technology (Ethiopia), 18500 Euro, 2023.
  7. Grant from IEEE EDS to organize a Upskilling Course on Flexible and Organic Electronics, 9000 USD, 2022.
  8. Chair of the Flexible/Wearable Electronics Committee for the More than Moore International Roadmap for Devices and Systems (2020-).

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